Recently, Intel and Italy announced that they will begin to provide customers with prototype samples of future memories using innovative phase change (PCM) manufacturing, an important milestone in the history of the memory industry. These prototypes are the first phase-change memories delivered to customers for evaluation, making phase-change memory technology a new step toward commercialization.
The memory chip "Alverstone" uses phase change memory technology. Phase-change memory is a promising new storage technology that reads data very fast, consumes less power than traditional flash technology, and supports data-bit-based modifications that are typically only available with random access memory (RAM). Features. Phase change memory has always been a hot research topic in the field of storage technology research and development. The launch of "Alverstone" marks that Intel and STMicroelectronics have fully promoted the commercialization of this technology.
"This is the biggest advancement in non-volatile memory development in 40 years," said EdDoller, chief technology officer of Numonyx, the joint venture flash memory company of STMicroelectronics and Intel. "To find and develop new non-volatile Storage technology, R & D personnel have made a lot of attempts and put forward many advanced concepts, among which phase change storage technology is the most interesting solution. Today Intel and STMicroelectronics handed phase change memory to customers, which is for the semiconductor industry. And both of our companies are a landmark event."
In related news reports, Intel and STMicroelectronics researchers recently presented another paper on the significant advancement of phase change memory technology at the Solid State Conference (ISSCC). The two companies have jointly developed the world's first A high-density multi-level cell (MLC) chip that can be fabricated using phase change memory technology as demonstrated above. The development of single-layer units that can only store one data bit per unit to the multi-level unit technology not only greatly increases the storage density, but also reduces the storage cost per byte. Therefore, multi-layer cells and phase change storage are used. Two major technologies of memory are a major advance in the development of memory technology.
In 2003, Intel and STMicroelectronics established a Phase Change Memory Cooperative Development Project Team (JDP). At the 2004 Very Large-Scale Symposium (VLSI), the project team demonstrated an 8-megabit phase-change memory array fabricated on a 180-nm process; at the 2006 VLSI Symposium, the project team was the first to release 128-nm with 90 nm. Megabit Alverstone phase change memory chip. In May 2007, STMicroelectronics, Intel and FranciscoPartners signed a joint venture agreement to form an independent semiconductor company, Numonyx. The future of "Alverstone" and phase change memory cooperative development project team will be transferred to the new company. The new company's strategic focus is to provide a complete memory solution, targeting the consumer electronics technology and industrial equipment, including high-tech devices such as MP3 players, digital cameras and computers. The joint venture plans to complete the transaction in the first quarter of 2008.
According to a research report by Web-Feet Market Research, the total market value of memory such as dynamic random access memory (DRAM), flash memory, and electrically erasable programmable read-only memory (EEPROM) reached $61 billion in 2007. Calculated in the traditional way, the cost of memory technology drops at the speed of Moore's Law, and as the size of the lithographic pattern shrinks, the density of the memory doubles every 18 months. In the next decade, as the feature size reduction of random access memory (RAM) and flash technology is limited, phase change memory will reduce costs at a faster rate. Compared to today's technology, the advent of multi-level cell phase change memory will further accelerate the rate of decline in cost per phase change memory technology. Finally, because of the bit-modifiable nature of dynamic random access memory (DRAM), the non-volatile nature of flash, the fast read characteristics of NOR flash, and the fast write characteristics of NAND flash, phase change memory will be able to satisfy the entire Demand in the memory market is likely to be a major driver of market growth over the next 10 years. Alverstone is a 128 megabit phase change memory fabricated on 90 nanometer technology designed to allow memory customers to evaluate the performance of phase change memory, giving handset and embedded system customers a better understanding of phase change memory technologies and how they are Integrate variable-phase memory in future system designs.
The memory chip "Alverstone" uses phase change memory technology. Phase-change memory is a promising new storage technology that reads data very fast, consumes less power than traditional flash technology, and supports data-bit-based modifications that are typically only available with random access memory (RAM). Features. Phase change memory has always been a hot research topic in the field of storage technology research and development. The launch of "Alverstone" marks that Intel and STMicroelectronics have fully promoted the commercialization of this technology.
"This is the biggest advancement in non-volatile memory development in 40 years," said EdDoller, chief technology officer of Numonyx, the joint venture flash memory company of STMicroelectronics and Intel. "To find and develop new non-volatile Storage technology, R & D personnel have made a lot of attempts and put forward many advanced concepts, among which phase change storage technology is the most interesting solution. Today Intel and STMicroelectronics handed phase change memory to customers, which is for the semiconductor industry. And both of our companies are a landmark event."
In related news reports, Intel and STMicroelectronics researchers recently presented another paper on the significant advancement of phase change memory technology at the Solid State Conference (ISSCC). The two companies have jointly developed the world's first A high-density multi-level cell (MLC) chip that can be fabricated using phase change memory technology as demonstrated above. The development of single-layer units that can only store one data bit per unit to the multi-level unit technology not only greatly increases the storage density, but also reduces the storage cost per byte. Therefore, multi-layer cells and phase change storage are used. Two major technologies of memory are a major advance in the development of memory technology.
In 2003, Intel and STMicroelectronics established a Phase Change Memory Cooperative Development Project Team (JDP). At the 2004 Very Large-Scale Symposium (VLSI), the project team demonstrated an 8-megabit phase-change memory array fabricated on a 180-nm process; at the 2006 VLSI Symposium, the project team was the first to release 128-nm with 90 nm. Megabit Alverstone phase change memory chip. In May 2007, STMicroelectronics, Intel and FranciscoPartners signed a joint venture agreement to form an independent semiconductor company, Numonyx. The future of "Alverstone" and phase change memory cooperative development project team will be transferred to the new company. The new company's strategic focus is to provide a complete memory solution, targeting the consumer electronics technology and industrial equipment, including high-tech devices such as MP3 players, digital cameras and computers. The joint venture plans to complete the transaction in the first quarter of 2008.
According to a research report by Web-Feet Market Research, the total market value of memory such as dynamic random access memory (DRAM), flash memory, and electrically erasable programmable read-only memory (EEPROM) reached $61 billion in 2007. Calculated in the traditional way, the cost of memory technology drops at the speed of Moore's Law, and as the size of the lithographic pattern shrinks, the density of the memory doubles every 18 months. In the next decade, as the feature size reduction of random access memory (RAM) and flash technology is limited, phase change memory will reduce costs at a faster rate. Compared to today's technology, the advent of multi-level cell phase change memory will further accelerate the rate of decline in cost per phase change memory technology. Finally, because of the bit-modifiable nature of dynamic random access memory (DRAM), the non-volatile nature of flash, the fast read characteristics of NOR flash, and the fast write characteristics of NAND flash, phase change memory will be able to satisfy the entire Demand in the memory market is likely to be a major driver of market growth over the next 10 years. Alverstone is a 128 megabit phase change memory fabricated on 90 nanometer technology designed to allow memory customers to evaluate the performance of phase change memory, giving handset and embedded system customers a better understanding of phase change memory technologies and how they are Integrate variable-phase memory in future system designs.
Provide you with the supply of pulse oximeter finger. to help you safely get back to your daily routine.
With more than 15+ yrs rich MFG experience, you can definitely trust in and cooperate with.
Our strict quality control protocol thoroughly vets every aspect of production, storage, and shipments all the way way to our end customers.
Our products include pulse Oximeter Finger, Forehead Thermometer, Automatic foam soap dispenser, etc.
Pulse Oximeter Manufacturers, oxygen saturation, oximetry
TOPNOTCH INTERNATIONAL GROUP LIMITED , https://www.mic11.com