Based on power MOSFET design considerations - Power Circuits - Circuit Diagram

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MOSFET used as a power switch

With decades of device design optimization, power MOSFET transistors bring new circuit topologies and power efficiency improvements. Power devices have changed from current drive to voltage drive, accelerating market penetration of these products. In the 1980s, planar gate power MOSFETs were first designed for high voltage devices, and the BVDSS voltage range reached 500-600V, achieving market success. During this period, the conduction loss of the power MOSFET is mainly determined by the channel density, junction field effect transistor (JFET) impedance, and epitaxial impedance (see Figure 1). As lithography equipment in the semiconductor industry becomes more sophisticated, transistor cell density is increased and conduction losses are improved. Lithography equipment enables higher cell densities while also enabling the BVDSS range of power MOSFETs to successfully drop to within 100V, enabling new automotive electronics, power and motor control applications. The conduction loss problem of the high voltage MOSFET is also transferred to the epitaxial design. On the other hand, the use of MOSFET devices in buck converters and the wider supply voltage range (30V) requirements have spurred demand for higher performance devices in the market.