Science and Technology Daily, Beijing, November 15th, according to the "Science" magazine official website on the 14th, the Chinese Academy of Sciences Shanghai Institute of Microsystems and Information Technology, associate researcher Rao Feng and colleagues developed a new phase change material - niobium alloy The conversion between polycrystalline and glassy states can be achieved in less than 1 nanosecond. The research published in this week's "Science" magazine broke through the storage speed limit of phase change memory (PCRAM) and laid the foundation for realizing China's independent general-purpose memory technology.
After decades of development, computers have become smaller, faster, and cheaper, and the challenges of continuing to improve storage performance have become more severe.
Static/dynamic random access memory (SRAM cache/DRAM memory) is a temporary storage medium for exchanging data directly with the computer's central processing unit, and can be freely fetched or stored as needed. At the beginning of this century, scientists have proposed that PCRAM is a promising new type of non-volatile memory, which stores "0" and "1" by switching between two phases.
The most commonly used phase change material is bismuth alloy (GST). In order to meet the high-speed random storage requirements of today's computers, the phase transition must be completed in sub-10 nanoseconds, while the phase transition speed of bismuth alloy. It usually takes tens to hundreds of nanoseconds, too slow to make it impossible to replace or replace traditional DRAM and SRAM memory.
Rao Feng and colleagues calculated the addition of transition metal to the niobium alloy by theoretical calculations, and screened the niobium alloy which can accelerate the formation of crystal nuclei by forming a more stable niobium chemical bond at a higher temperature.
They also synthesized this new phase change material and experimentally proved that the new material can quickly complete the phase transition reversible transformation of crystal and glass state in 700 picoseconds (0.7 nanoseconds). The researchers said that this speed increase makes phase-change memory promising to replace the existing high-speed memory into practical use, and will further boost the overall performance of the computer in the future, towards faster, lower power consumption and longer life.
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