Nitride* Power Semiconductors

Following the next generation of power semiconductor materials, silicon carbide (SiC), will soon be replaced by GaN to meet the practical stage, because its power loss is less than half that of conventional materials. Since GaN has characteristics that can support high-frequency power, it is widely accepted in the industry that GaN is suitable for power circuits of digital home appliances.

At present, the cost of GaN power semiconductors is still higher than that of GaN, and the process technology is not complete enough. It cannot tolerate high temperatures during the packaging process. If the problem can be solved, it is estimated that the market size will be further expanded.